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| NPN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HC4242S APPLICATIONS high Voltage high-Speed Switching. ABSOLUTE MAXIMUM RATINGS a=25ae(c) T TO-220 T stg Storage Temperature----------55~150ae T j Junction Temperature------------150ae PCCollector Dissipation Tc=25ae----------(c) 75W VCBO Collector- Base Voltage-----------700V VCEO Collector-Emitter Voltage----------400V 1D Base B Collector C VE B O Emitter - Base Voltage------------ 2D 9V 3D Emitter E ICCollector Current DC(c) ------------ - 4A ICCollector Current Pulse(c)----------- 8A -Ib Base Current----------------2mA ELECTRICAL CHARACTERISTICS a=25ae(c) T Symbol BVCEO IEBO HFE 2(c) VCE(sat1) Collector- Emitter Saturation Voltage VCE(sat2) Collector- Emitter Saturation Voltage VCE(sat3) Collector- Emitter Saturation Voltage VBE(sat1) Base-Emitter Saturation Voltage VBE(sat2) Base-Emitter Saturation Voltage Cob fT tON tSTG tR Output Capacitance Current Gain-Bandwidth Product Turn-On Time Storage Time Rise Time hFE Classification H1 H2 H3 H4 H5 4 0.8 4 0.9 65 Characteristics Collector-Emitter Breakdown Voltage Emitter Cut-off Current 10 8 Min 400 1.0 40 40 0.5 0.6 1 1.2 1.6 V V V V V pF Typ Max Unit V Test Conditions IC=10mA, IB=0 HFE 1(c) DC Current Gain mA VEB=9V, IC=0 VCE=5V, IC=1A VCE=5V, IC=2A IC=1A, IB =0.2A IC=2A, IB =0.5A IC=4A, IB =1A IC=1A, IB =0.2A IC=2A, IB =0.5A VCB=10V, IE=0 f=0.1MHz MHz VCE=10V, IC=0.5A |I S |I S |I S Vcc=125VC=2A I IB1 = IB2 =0.4A 10 16 14 21 19 6 2 24 1 3 29 0 4 NPN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HC4242S |
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